PART |
Description |
Maker |
NE5511279A-T1A-A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Laboratories
|
2SK3391 2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs
|
2SK2596BXTL-E 2SK259607 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
D1029UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
D1021UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers) From old datasheet system MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
NXP Semiconductors
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|